The source of power is generally a direct current voltage from a battery or power supply. Examples are bipolar transistors, field effect transistors, light emitting diodes (LED), metal-oxide semiconductor field effect transistors (MOSFED), etc. Passive Discrete components do not rise the power of a signal. They usually lead to the power to be lost. Some can expand the voltage at the expenditure of current, so totally there is a loss of power.
Market Dynamics:
The Internet of Things applications are rising, which is anticipated to fuel the sales of discrete semiconductors. Furthermore, the wireless communications sector is anticipated to advance with the growth in 5G networks. Fifth-generation networks are also telling of the likelihood of consumers upgrading their handsets/devices to later drive discrete adoption across the world. Various offerers are also advancing SiC and other new areas in substances technology, with BASiC Semiconductor already having mass-generated and made accessible SiC MOSFETs.
On contrary, Smart factories are anticipated to comprise various sensors to observe several aspects of the working surrounding. 5G network is anticipated to provide low-latency, wireless flexibility and high-capacity performance to handle the restraints in the production surrounding.
Key features of the study:
- This report provides in-depth analysis of the global discrete semiconductor market, and provides market size (US$ Billion) and compound annual growth rate (CAGR%) for the forecast period (2022–2030), considering 2021 as the base year
- It elucidates potential revenue opportunities across different segments and explains attractive investment proposition matrices for this market
- This study also provides key insights about market drivers, restraints, opportunities, new product launches or approval, market trends, regional outlook, and competitive strategies adopted by key players
- It profiles key players in the global discrete semiconductor market based on the following parameters – company highlights, products portfolio, key highlights, financial performance, and strategies
- Major players in the global analytical instrumentation therapy market are Toshiba Electronic Devices & Storage Corporation (Toshiba Corp.), Hitachi Power Semiconductor Device Ltd (Hitachi Ltd), Mitsubishi Electric Corporation, Vishay Intertechnology Inc., NXP Semiconductors NV, ON Semiconductor Corporation, Microsemi Corporation (Microchip Technology), Diodes Incorporated, STMicroelectronics NV, Eaton Corporation PLC, ROHM Co. Ltd, Renesas Electronics Corporation, Nexperia BV, Fuji Electric Co. Ltd, Cree Inc., Qorvo Inc., D3 Semiconductor LLC, ABB Limited, Infineon Technologies AG, United Silicon Carbide Inc., Taiwan Semiconductor Co. Ltd, Littelfuse Inc. and General Electric Company.
- Insights from this report would allow marketers and the management authorities of the companies to make informed decisions regarding their future product launches, type up-gradation, market expansion, and marketing tactics
- The global discrete semiconductor market report caters to various stakeholders in this industry including investors, suppliers, product manufacturers, distributors, new entrants, and financial analysts
- Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the global discrete semiconductor market
Detailed Segmentation:
- Global Discrete Semiconductor Market, By Type:
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- MOSFET
- IGBT
- Bipolar Transistor
- Thyristor
- Rectifier
- Other types
- Global Discrete Semiconductor Market, By End-User Industry:
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- Automotive
- Consumer Electronics
- Communication
- Industrial
- Other End-user Industries
- Global Discrete Semiconductor Market, By Geography:
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- Americas
- Europe
- China
- Japan
- Taiwan
- Rest of the World
- Company Profiles:
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- ABB Limited
- ON Semiconductor Corporation
- Infineon Technologies AG
- STMicroelectronics NV
- Toshiba Electronic Devices & Storage Corporation (Toshiba Corp.)
- NXP Semiconductors NV
- Diodes Incorporated
- Nexperia BV
- D3 Semiconductor LLC
- Eaton Corporation PLC
- Hitachi Power Semiconductor Device Ltd (Hitachi Ltd)
- Mitsubishi Electric Corporation
- Fuji Electric Co. Ltd
- Taiwan Semiconductor Co. Ltd
- Vishay Intertechnology Inc.
- Renesas Electronics Corporation
- ROHM Co. Ltd
- Microsemi Corporation (Microchip Technology)
- Qorvo Inc.
- Cree Inc.
- General Electric Company
- Littelfuse Inc.
- United Silicon Carbide Inc.
