The GaN power devices market was valued at US$ 330.2 million in 2016 and is projected to reach US$ 2,198.9 million by 2025, exhibiting a CAGR of 23.5% over the forecast period, according to the Global GaN Power Device Market Report, by Device Type (Power Device, RF Power Device), by Voltage Range (<200V, 200-600V, >600V), by Application (Power Drives, Supply and Inverter, Radio Frequency), by Vertical (Telecommunications, Industrial, Automotive, Renewables, Consumer and Enterprise, Medical, Military, and Defense, & Aerospace), published by Coherent Market Insights.
Gallium nitride is material utilized in the manufacturing of semiconductor power systems, RF components, and light emitting diodes (LEDs). Use of these materials has evolved from discrete transistor outline package (TO) to surface mount devices, to co-packaged solutions with driver on the same chip. This in turn is expected to present strong growth landscape for the GaN power device market over the forecast period.
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Browse 60 market data tables* and 40 figures* on "Global GaN Power Device Market” - Global forecast to 2025.
Key Trends and Analysis of the Global GaN Power Devices Market:
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Some of the major players in the global GaN power devices market are Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation.
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