Gallium nitride (GaN) is used in production of semiconductor power devices and Radio-Frequency (RF) components and light emitting diodes (LEDs). GaN powered devices have proved efficient than silicon semiconductors in power conversion, RF, and analog applications. GaN conducts electrons over 1000 times more efficiently than silicon. Moreover, the manufacturing cost of GaN devices is lower than silicon, since GaN devices are produced using standard silicon manufacturing procedures in the same factories that currently produce conventional silicon semiconductors. The devices are much smaller for the same functional performance and can be produced per wafer. GaN is lower on resistance giving lower conductance losses. The devices powered by GaN are faster that yield less switching losses and less capacitance results in less losses when charging and discharging devices. Moreover, GaN devices need less power to drive the circuit and require less space on the printed circuit board. These significant benefits of GaN over other alternatives such as silicon transistors are expected to fuel the overall growth of the GaN power device market.
Figure 1. Global GaN Power Device Market Value, (US$ Million)
Substantial growth of end-use verticals is expected to boost market growth
Advancements in technology related to GaN power devices are enhancing the computational power of all systems, in turn boosting market growth. For instance, in December 2017, Yuji Zhao, an electrical and computer expert from Arizona State University received a three year grant of US$ 750,000 from National Aeronautics and Space Administration’s (NASA) Hot Operating Temperature Technology (HOTTech) program for the gallium nitride processor for applications in space. In January 2018, Corsair introduced Corsair AX1600i featuring off-the shelf efficiency, ripple suppression, noise levels, voltage regulation, and highly compact power supply unit. These two instances of technological developments are primarily based on the utilization of Gallium Nitride based materials. replacing Silicon transistors as prominently used material in the switching devices.
The recent past has witness high proliferation of electric vehicles and increasing adoption of electrical and electronic components in internal combustion engines for enhanced and convenient control among users. According to Coherent Market Insights, vehicle electrification technologies are expected to witness a CAGR of over 8.8% over the forecast period and be valued at over US$ 120 billion by 2025. Increasing adoption of autonomous vehicles is expected to increase the demand for efficient communication systems featuring high frequency bandwidth and robust operations. This in turn, is expected to fuel growth of the market for GaN power devices in the near future.
High cost of systems featuring integration of gallium nitride components due to capital intensive nature of materials and manufacturing procedures is expected to hamper growth of the market. Moreover, GaAs components are widely used in small signal Monolithic Microwave Integrated Circuit (MMIC) and low noise amplifier (LNA). Application of gallium nitride semiconductor is projected to become mainstream component, though it will require considerable time owing to the cost factor and thus, is among the prominent growth challenges.
Asia Pacific accounts for the largest population base and is also the largest market for key end-use industries, in turn, contributing to the largest consumer base of GaN power device. According to Coherent Market Insights’ analysis, China and India contribute to around 35% of the global population base. Moreover, largest consumer base for automotive, consumer electronics, communication, and industrial manufacturing will provide the strongest growth prospects over the forecast period.
Some of the key players in the GaN power device market are Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation.
Our study on the global GaN power devices market includes the gallium nitride power and RF power devices that find predominant applications in power drives (electric vehicle drives, industrial drives, light detection), inverters, supplies, wireless charging, RF front end module, radars and space satellites. Extensive range of applications and the potential to cannibalize the existing silicon semiconductor market are expected to create immense opportunity for growth of the global GaN power devices market over the forecast period.
GaN materials include a wide range of features such as wide energy band gap (3.4eV), high heat capacity, thermal conductivity, low device resistance, and ability to operate at transition speeds from on to off and vice versa, are among the prominent benefits, inadvertently driving growth of the GaN power devices market. High conductivity in On state in comparison to alternatives such as silicon substitutes present high opportunity to improve the energy efficiency in power distribution and control systems. However, limited availability and relatively high cost of the material is expected to hinder the overall growth of the market in the near future.
Key features of the study:
“*” marked represents similar segmentation in other categories in the respective section.