IGBT and Super Junction MOSFET Market is Expected to Surpass USD 41.69 Bn by 2032

Metal oxide semiconductor field-effect transistor (MOSFET) is an enhancement in metal-oxide technology and widely used as a rectifier or switch in power electronics. An insulated-gate bipolar transistor is introduced to utilize the best of bipolar transistor and MOSFET. IGBTs are used in nearly all segments of the electronics industry, from consumer to industrial, because of their high-power output, compact size, and enhanced reliability in end applications.

Market Statistics:

The global IGBT and super junction MOSFET market is expected to surpass USD 41.69 Bn by 2032.

Market Driver

Decrease in heat dissipation is expected to propel the global IGBT and super junction MOSFET market growth over the forecast period. Super junction MOSFET is highly compact and thus, it offers higher energy efficiency and low heat dissipation. Technological advancements in the fabrication and packaging process have led to improvements in MOSFETs, which in turn, has led to a decrease in heat dissipation. To reduce the power losses in IT equipment, the power converters need to be made more power-efficient. As a result, there has been an increase in the demand for low-loss power IGBTs and super junction MOSFETs.

Market Opportunity

Major growth opportunities in EV/HEV in the global IGBT and super junction MOSFET market. Electric cars gaining significant traction in the market recently. Increasing fuel efficiency and emission norms mandated by governments across the globe are leading to increasing demand for electric vehicles. Electronic control and smart power management are needed to reduce emissions from vehicles. This creates a demand for fast switching power devices including IGBTs and super junction MOSFETs.

Global IGBT and Super Junction MOSFET Market: Recent Developments

In April 2020, Toshiba Corporation, a Japan based multinational conglomerate company launched improved 1350 V IGBT device for domestic appliance applications.

In February 2021, Infineon Technologies AG, a German semiconductor manufacturer launched a 650 V CoolSiC Hybrid IGBT

1. Key market players are involved in product launches, in order to gain a competitive edge in the market. For instance, in April 2017, Mitsubishi Electric Corporation launched eight new X-Series HVIGBT modules in three classes.
2. Major market players are involved in product launches, in order to enhance the market presence. For instance, in April 2019, Fuji Electric Corp of America, a subsidiary of Fuji Electric Co. Ltd., introduced a new High Capacity Uninterruptable Power Supply System ‘7400WX-T3U’.

Market Restraint

The emergence of new entrants in the market is expected to hinder the global IGBT and super junction MOSFET market growth over the forecast. New entrants in the market are offering products at more competitive prices as compared to major market players. As a result of this, the global IGBT and super junction MOSFET market has become fragmented. The presence of new entrants is expected to hinder the market revenue of major market players.

Global IGBT and Super Junction MOSFET Market - Impact of Coronavirus (Covid-19) Pandemic

The outbreak of COVID-19 pandemic has significantly impacted many industries and markets including the global IGBT and super junction MOSFET market. Following the pandemic, many countries across the globe close down their borders temporarily and suspended international travel. Stringent lockdown policies were adopted to curb the spread of the virus, which led to sharp decline in trade. Many manufacturing industries had to shut down their operations temporarily with restriction on physical distancing. Since MOSFETs are widely used in automotive electronics and the automobile sale dipped during the pandemic, the market witnessed slow economic growth. However, rollout of vaccines and relaxation in regulations is expected to aid the market to recover gradually.

To know the latest trends and insights prevalent in the Global IGBT and Super Junction MOSFET Market, click the link below:

https://www.coherentmarketinsights.com/market-insight/igbt-and-super-junction-mosfet-market-4858

Key Takeaways:

• The global IGBT and super junction MOSFET market is valued at USD 18.51 Bn in 2025 and is forecast to reach a value of USD 41.69 Bn by 2032 at a CAGR of 12.3% between 2025 and 2032. This is owing to Growing focus on higher energy efficiency

Market Trends

Major companies are focused on research and development activities, in order to enhance the product portfolio. For instance, in December 2013, Mitsubishi Electric Corporation launched rail traction inverter systems for 1,500V DC catenary using SiC power modules. In January 2013, Hitachi Power Semiconductor Device Ltd. launched new high-voltage ECN30210 series for single-chip inverter ICs (600 V/ 1 A). These ICs are optimized for controlling small fan motors.

Key companies are involved in partnerships and collaborations, in order to gain a competitive edge in the market. For instance, in May 2013, Hitachi Europe Ltd. partnered with Amantys Ltd. for the sale of IGBT module gate drivers. Furthermore, in November 2010, Infineon Technologies partnered with Xinjiang Goldwind Science and Technology Co., Ltd., under which, Infineon would provide core power semiconductor components to Goldwind for its wind turbines.

Competitive Section

Key players operating in the global IGBT and super junction MOSFET market are Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd.