IGBT is a power semiconductor device that offers fast switching and high efficiency. It competes with other semiconductor devices including Gallium Nitride (GaN), MOSFETs, and Silicon carbides. IGBTs offer the combined advantage of MOSFETs and bipolar transistors by providing both high input impedance and high-voltage drive. IGBTs are ideal for applications that require high current and high breakdown voltage, owing to their improved conductivity modulation characteristics.
The global IGBT and super junction MOSFET market is estimated to be valued at US$ 12,782.8 million in 2021 and is expected to exhibit a CAGR of 12.5% over the forecast period (2021-2028).
In December 2020, Fuji Electric Co., Ltd., a Japan based electronics company launched X Series IGBT-IPM*1 with 7th-generation X Series devices.
In November 2020, Fuji Electric Co., Ltd., a Japan based electronics company launched HPnC,*1 with 7th-generation X Series IGBT*2 module.
In June 2021, Mitsubishi Electric, a Japan based electronics company launched T-series 2.0kV IGBT Module for industrial use.
Figure 1. Global IGBT and Super Junction MOSFET Market Value (US$ Mn), by Region, 2020
Asia Pacific held dominant position in the global IGBT and super junction MOSFET market in 2020, accounting for 48.5% share in terms of volume, followed by Europe and North America, and RoW respectively.
Market Dynamics- Drivers
Growing focus on higher energy efficiency is expected to drive growth of the global IGBT and super junction MOSFET market during the forecast period. The demand for high energy efficiency has increased in the recent past providing ample opportunities for IGBT and super junction MOSFETs. Constant design improvements across the electrical and electronics industry have led to increased demand for IGBT and MOSFETs. At the same time, the alternative and renewable energy market have gained significant traction, especially the solar and wind energy market. According to Coherent Market Insights’ analysis, solar photovoltaic (PV) inverter shipments are expected to reach 53.6 million units by 2016, growing from 14.3 million units in 2013. Furthermore, rising focus on increasing electricity transmission efficiency has supported growth of smart grids market thereby boosting the demand for IGBT and MOSFETs.
Rising deployment of electric vehicles and hybrid electric vehicles (EV/HEV) is expected to boost the global IGBT and super junction MOSFET market growth over the forecast period. Electrification in cars with an internal combustion engine has led to increased demand for power semiconductors. According to the International Energy Agency, the global EV sales increased from 2011 to 113,000 in 2012. Increasing fuel efficiency and emission norms mandated by governments across the globe has led to increasing demand for electric vehicles. Electronic control and smart power management are needed to reduce emissions from vehicles. As a result of this, the demand for IGBT and super junction MOSFETs.
Rapid growth of smart grids market can present lucrative growth opportunities in the global IGBT and super junction MOSFET market. The global smart grid market is expanding rapidly, owing to a major increase in the installation of smart meters worldwide, in order to ensure improved efficiency in power transmissions and distribution. According to Coherent Market Insights’ analysis, the global smart grid market was valued at US$ 35 billion in 2012, reaching US$ 65-70 billion by 2017. This smart distribution infrastructure and smart meters will need better power management technology and are expected to create demand for power semiconductors including IGBTs and super junction MOSFETs in this sector.
Major business opportunities available Asia Pacific IGBT and super junction MOSFET market. Asia Pacific is an emerging market with massive growth opportunities present. Rapid industrialization and urbanization in emerging economies such as India, China, and Indonesia have led to increasing demand for IGBT and super junction MOSFETs. Major companies in the market can capitalize on these opportunities by introducing novel products and gain a competitive edge in the market.
IGBT and Super Junction MOSFET Market Report Coverage
|Base Year:||2020||Market Size in 2021:||US$ 12,782.8 Mn|
|Historical Data for:||2017 to 2020||Forecast Period:||2021 to 2028|
|Forecast Period 2021 to 2028 CAGR:||12.5%||2028 Value Projection:||US$ 29,153.7 Mn|
Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd.
|Restraints & Challenges:||
The global IGBT and super junction MOSFET market is witnessing increased focus on IGBT chip optimization, owing to the increased demand for higher density, and increased power output and thermal resistivity. Several end-use applications, especially consumer applications, prefer IGBTs with small size and high reliability. Major vendors across the market are investing in research and development, in order to manufacture optimized chips that can improve the efficiency of IGBT modules.
The global IGBT and super junction MOSFET market is experiencing increased interest of players in IGBTs and super junction MOSFETs catering to a higher voltage range. From the time it ceased to make motor control IGBTs in the 1990s, ON Semiconductor has been focusing on IGBTs for automotive ignition. However, the increasing potential across the high-performance motor drive segment compelled the company to launch 600V and 1200V IGBTs in 2012. Similarly, Alpha and Omega Semiconductor launched IGBT devices for 600V range in 2012. ABB Ltd. introduced a diode function on its IGBT products to create a compact and higher power product called bi-mode insulated gate transistor.
Figure 2. Global IGBT and Super Junction MOSFET Market Share, By Product Type, 2020
Key Takeaways of the Graph:
Market Dynamics- Restraints
Competition from other power semiconductors is expected to hamper the global IGBT and super junction MOSFET market growth over the forecast period. The semiconductor industry is focused on achieving better efficiency, lower size, and cost through novel substrate technologies. Gallium-Nitride (GaN) and Silicon-Carbide have emerged as new competing technologies in the power semiconductor industry alongside the already existing thyristors, rectifiers, and integrated gate-commutated thyristor (IGCT) among others. Although the IGBT and super junction MOSFETs are expected to continue to grow, the semiconductor sector has shown increased interest in GaN devices due to the aforementioned advantage in breakdown voltage, power density, and switching frequency.
High production cost is expected to restrain growth of the global IGBT and super junction MOSFET market during the forecast period. Super junction MOSFET requires a significantly high cost for production as compared to other contemporary products. As a result of this, the majority of consumers are inclined towards substitute products.
Key players operating in the global IGBT and super junction MOSFET market are Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd.
Frequently Asked Questions